ISO/TTA 4-2002 硅基质上薄膜导热性的测量
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【英文标准名称】:Measurementofthermalconductivityofthinfilmsonsiliconsubstrates
【原文标准名称】:硅基质上薄膜导热性的测量
【标准号】:ISO/TTA4-2002
【标准状态】:现行
【国别】:国际
【发布日期】:2002-11
【实施或试行日期】:
【发布单位】:国际标准化组织(IX-ISO)
【起草单位】:
【标准类型】:()
【标准水平】:()
【中文主题词】:
【英文主题词】:Insulations;Materialstesting;Microelectronics;Samples;Silicon;Testing;Thermalconductivity;Thermaltesting;Thickness;Thinfilms;Thin-filmtechnology
【摘要】:1.1Astandardprocedureforthethree-omegamethodisproposedformeasuringthethermalconductivityofathin,electricallyinsulatingfilm,onasubstratehavingathermalconductivitysignificantlygreaterthanthethermalconductivityofthefilm.Thismethodisapplicabletoafilmonasiliconsubstratewiththefollowingcharacteristics:a)thefilmiselectricallyinsulating;b)thefilmhasathermalconductivitythatislessthanonetenththethermalconductivityofsilicon;c)thefilmisuniforminthicknessandthethicknessliesintherange0,25μmto1μm;d)themaximumdimensionsofthefilmarelimitedbythesizesofthepreparationandmeasurementapparatus;e)theminimumdimensionsofthefilmarelimitedbytheminimumsizeofthecircuitelementthatcanbeplacedonthefilmsurface.NOTEAspecimenapproximately15mmby25mmisofanappropriatesizealthoughspecimensassmallas10mm×10mmareusable.1.2Themethodisdirectlyapplicabletofilmsofsilicondioxideonsiliconwafersubstrates.1.3Themethodmaybeapplicabletoinsulatingfilmsonotherhigh-thermalconductivitysubstratesprovidedthattheparametersofthesubstratematerialaresubstitutedfortheparametersofsiliconusedinthismethodandtheassociatedcomputerprogram.1.4Themethodisapplicabletomeasurementsnearroomtemperature.
【中国标准分类号】:L40
【国际标准分类号】:17_200_99;19_100;31_080_01
【页数】:19P.;A4
【正文语种】:英语
【原文标准名称】:硅基质上薄膜导热性的测量
【标准号】:ISO/TTA4-2002
【标准状态】:现行
【国别】:国际
【发布日期】:2002-11
【实施或试行日期】:
【发布单位】:国际标准化组织(IX-ISO)
【起草单位】:
【标准类型】:()
【标准水平】:()
【中文主题词】:
【英文主题词】:Insulations;Materialstesting;Microelectronics;Samples;Silicon;Testing;Thermalconductivity;Thermaltesting;Thickness;Thinfilms;Thin-filmtechnology
【摘要】:1.1Astandardprocedureforthethree-omegamethodisproposedformeasuringthethermalconductivityofathin,electricallyinsulatingfilm,onasubstratehavingathermalconductivitysignificantlygreaterthanthethermalconductivityofthefilm.Thismethodisapplicabletoafilmonasiliconsubstratewiththefollowingcharacteristics:a)thefilmiselectricallyinsulating;b)thefilmhasathermalconductivitythatislessthanonetenththethermalconductivityofsilicon;c)thefilmisuniforminthicknessandthethicknessliesintherange0,25μmto1μm;d)themaximumdimensionsofthefilmarelimitedbythesizesofthepreparationandmeasurementapparatus;e)theminimumdimensionsofthefilmarelimitedbytheminimumsizeofthecircuitelementthatcanbeplacedonthefilmsurface.NOTEAspecimenapproximately15mmby25mmisofanappropriatesizealthoughspecimensassmallas10mm×10mmareusable.1.2Themethodisdirectlyapplicabletofilmsofsilicondioxideonsiliconwafersubstrates.1.3Themethodmaybeapplicabletoinsulatingfilmsonotherhigh-thermalconductivitysubstratesprovidedthattheparametersofthesubstratematerialaresubstitutedfortheparametersofsiliconusedinthismethodandtheassociatedcomputerprogram.1.4Themethodisapplicabletomeasurementsnearroomtemperature.
【中国标准分类号】:L40
【国际标准分类号】:17_200_99;19_100;31_080_01
【页数】:19P.;A4
【正文语种】:英语
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